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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. may 2009 doc id 15685 rev 1 1/12 12 stp13n95k3, STF13N95K3 stw13n95k3 n-channel 950 v, 0.68 , 10 a, to-220, to-220fp, to-247 supermesh3? power mosfet features 100% avalanche tested extremely large avalanche performance gate charge minimized very low intrinsic capacitances zener-protected application switching applications description the new supermesh3? series of power mosfets is the result of the fine-tuning of st's well-established strip-based powermesh? layout with a new optimized vertical structure. the innovative design offer significantly reduced on- resistance, exceptional dynamic performance and very large avalanche capab ility, making the device suitable for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d p w stp13n95k3 950 v < 0.85 10 a 190 w STF13N95K3 950 v < 0.85 10 a 40 w stw13n95k3 950 v < 0.85 10 a 190 w 1 2 3 1 2 3 to-220 to-247 to-220fp 1 2 3 d(2) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging STF13N95K3 13n95k3 to-220fp tube stp13n95k3 13n95k3 to-220 tube stw13n95k3 13n95k3 to-247 tube www.st.com
contents stp13n95k3, STF13N95K3, stw13n95k3 2/12 doc id 15685 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
stp13n95k3, STF13N95K3, stw13n95k3 electrical ratings doc id 15685 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp to-247 v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 10 10 (1) 1. limited only by maximu m temperature allowed 10 a i d drain current (continuous) at t c = 100 c 6.3 6.3 (1) 6.3 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 40 40 (1) 40 a p tot total dissipation at t c = 25 c 190 40 190 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 13 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) tbd mj dv/dt (3) 3. i sd 10 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 6 v/ns v iso insulation withstand voltage (ac) 2500 t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-220fp to-247 r thj-case thermal resistance junction-case max 0.66 3.13 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.50 50.00 c/w t j maximum lead temperature for soldering purpose 300 c/w
electrical characteristics stp13n95k3, STF13N95K3, stw13n95k3 4/12 doc id 15685 rev 1 2 electrical characteristics (tcase =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v; v ds =0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5 a 0.68 0.85 table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 13 a - tbd - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1700 178 2 - pf pf pf c o(tr) (2) 2. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 760 v, v gs = 0 - tbd - pf c o(er) (3) 3. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 760 v, v gs = 0 - tbd - pf r g gate input resistance f=1 mhz open drain - 2 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 10 a, v gs = 10 v (see figure 3) - 49 tbd tbd - nc nc nc
stp13n95k3, STF13N95K3, stw13n95k3 electrical characteristics doc id 15685 rev 1 5/12 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 475 v, i d = 5 a, r g = 4.7 , v gs = 10 v (see figure 2) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 10 40 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s v dd = 60 v (see figure 4) - tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 4) - tbd tbd tbd ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) -30 - 30 v
test circuits stp13n95k3, STF13N95K3, stw13n95k3 6/12 doc id 15685 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stp13n95k3, STF13N95K3, stw13n95k3 package mechanical data doc id 15685 rev 1 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stp13n95k3, STF13N95K3, stw13n95k3 8/12 doc id 15685 rev 1 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
stp13n95k3, STF13N95K3, stw13n95k3 package mechanical data doc id 15685 rev 1 9/12 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
package mechanical data stp13n95k3, STF13N95K3, stw13n95k3 10/12 doc id 15685 rev 1 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
stp13n95k3, STF13N95K3, stw13n95k3 revision history doc id 15685 rev 1 11/12 5 revision history table 9. document revision history date revision changes 15-may-2009 1 first release
stp13n95k3, STF13N95K3, stw13n95k3 12/12 doc id 15685 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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